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TGPF30N40P-R 数据表(PDF) 4 Page - TRinno Technology Co., Ltd. |
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TGPF30N40P-R 数据表(HTML) 4 Page - TRinno Technology Co., Ltd. |
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4 / 6 page ![]() August. 2012 : Rev0 4/6 www.trinnotech.com TGPF30N40P Fig. 7 Turn on time vs. gate resistance Fig. 8 Turn on time vs. collector current Fig. 9 Turn on time vs. Case temperature Fig. 10 Turn off time vs. gate resistance Fig. 11 Turn off time vs. collector current Fig. 12 Turn off time vs. Case temperature 0 20 40 60 80 100 1 10 100 1000 Common Emitter V cc = 150V, V GE = 15V, I C = 30A T C 25 oC T C 125 oC T d(on) Gate Resistance, R G [Ω] T r 0 20 40 60 80 100 10 100 1000 Common Emitter V cc = 150V, V GE = 15V, I C = 30A T C 25 oC T C 125 oC T d(off) Gate Resistance, R G [Ω] T f 10 20 30 40 50 60 70 80 90 1 10 100 1000 Collector Current, I C [A] Common Emitter V cc = 150V, V GE = 15V, R G = 5Ω T C 25 oC T C 125 oC T d(off) T f 40 60 80 100 120 1 10 100 Common Emitter V cc = 150V, V GE = 15V, R G = 5Ω, I C = 30A T d(on) T r Case Temperature, T C [ oC] 40 60 80 100 120 10 100 Common Emitter Vcc= 150V, VGE = 15V, RG = 5Ω, IC = 30A T f T d(off) Case Temperature, T C [ oC] 10 20 30 40 50 60 70 80 90 1 10 100 1000 Common Emitter V cc = 150V, V GE = 15V, R G = 5Ω T C 25 oC T C 125 oC T d(on) Collector Current, I C [A] T r |
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