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TGPF30N40P-R 数据表(PDF) 5 Page - TRinno Technology Co., Ltd. |
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TGPF30N40P-R 数据表(HTML) 5 Page - TRinno Technology Co., Ltd. |
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5 / 6 page ![]() August. 2012 : Rev0 5/6 www.trinnotech.com TGPF30N40P Fig. 13 Gate charge characteristics Fig. 14 SOA Fig. 15 RBSOA Fig. 16 Transient thermal impedance 1E-5 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 1 10 Duty = 0.5 0.1 0.2 0.05 0.01 0.02 Rectangular Pulse Width [sec] single pulse 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 T C = 25 oC T J = 150 oC Single Pulse 1ms 10ms 10us 100us DC I C Max (pulsed) Collector - Emitter Voltage, V CE [V] I C Max (continuous) 0 5 10 15 20 25 30 0 5 10 15 V GE = 15V, I C = 30A, T C = 25 oC V CE = 150V V CE = 200V V CE = 320V Gate Charge, Q G [nC] 1 10 100 1000 1 10 100 1000 Collector - Emitter Voltage, V CE [V] V GE = 15V, Tc = 125 o C |
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