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TGPF30N40P-R 数据表(PDF) 2 Page - TRinno Technology Co., Ltd.

部件名 TGPF30N40P-R
功能描述  • 400V Trench Technology
PDF  6 Pages
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制造商  TRINNO [TRinno Technology Co., Ltd.]
网页  http://www.trinnotech.com/eng/main/main.php
标志 TRINNO - TRinno Technology Co., Ltd.

TGPF30N40P-R 数据表(HTML) 2 Page - TRinno Technology Co., Ltd.

  TGPF30N40P-R Datasheet HTML 1Page - TRinno Technology Co., Ltd. TGPF30N40P-R Datasheet HTML 2Page - TRinno Technology Co., Ltd. TGPF30N40P-R Datasheet HTML 3Page - TRinno Technology Co., Ltd. TGPF30N40P-R Datasheet HTML 4Page - TRinno Technology Co., Ltd. TGPF30N40P-R Datasheet HTML 5Page - TRinno Technology Co., Ltd. TGPF30N40P-R Datasheet HTML 6Page - TRinno Technology Co., Ltd.  
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August. 2012 : Rev0
TGPF30N40P
Electrical Characteristics of the IGBT T
C=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min
Typ
Max
Units
OFF
Collector
– Emitter Breakdown Voltage
BVCES
V
GE = 0V, IC = 1mA
400
--
--
V
Zero Gate Voltage Collector Current
I
CES
V
CE = 400V, VGE = 0V
--
--
100
µA
Gate
– Emitter Leakage Current
I
GES
V
CE = 0V, VGE = ±30V
--
--
± 250
nA
ON
Gate
– Emitter Threshold Voltage
V
GE(TH)
V
GE = VCE, IC = 1mA
2
3.1
4.5
V
Collector
– Emitter Saturation Voltage
VCE(SAT)
V
GE = 15V, IC = 30A, TJ = 25
oC
--
1.4
2.0
V
V
GE = 15V, IC = 30A, TJ = 125
oC
--
1.52
--
V
DYNAMIC
Input Capacitance
C
IES
V
CE = 25V,
V
GE = 0V,
f = 1MHz
--
845
--
pF
Output Capacitance
C
OES
--
50
--
pF
Reverse Transfer Capacitance
C
RES
--
23
--
pF
SWITCHING
Turn-On Delay Time
t
d(on)
V
CC = 150V, IC = 30A,
R
G = 5Ω, VGE = 15V,
Resistive Load, T
J = 25
oC
--
13
--
ns
Rise Time
t
r
--
105
--
ns
Turn-Off Delay Time
t
d(off)
--
35
--
ns
Fall Time
t
f
--
160
--
ns
Turn-On Delay Time
t
d(on)
V
CC = 150V, IC = 30A,
R
G = 5Ω, VGE = 15V,
Resistive Load, T
J = 125
oC
--
14
--
ns
Rise Time
t
r
--
145
--
ns
Turn-Off Delay Time
t
d(off)
--
40
--
ns
Fall Time
t
f
--
240
--
ns
Total Gate Charge
Qg
V
CC = 150V, IC = 30A,
V
GE = 15V
--
26
--
nC
Gate-Emitter Charge
Qge
--
3.1
--
nC
Gate-Collector Charge
Qgc
--
9
--
nC



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