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TDA8564Q 数据表(PDF) 5 Page - NXP Semiconductors

部件名 TDA8564Q
功能描述  2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
PDF  15 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

TDA8564Q 数据表(HTML) 5 Page - NXP Semiconductors

  TDA8564Q Datasheet HTML 1Page - NXP Semiconductors TDA8564Q Datasheet HTML 2Page - NXP Semiconductors TDA8564Q Datasheet HTML 3Page - NXP Semiconductors TDA8564Q Datasheet HTML 4Page - NXP Semiconductors TDA8564Q Datasheet HTML 5Page - NXP Semiconductors TDA8564Q Datasheet HTML 6Page - NXP Semiconductors TDA8564Q Datasheet HTML 7Page - NXP Semiconductors TDA8564Q Datasheet HTML 8Page - NXP Semiconductors TDA8564Q Datasheet HTML 9Page - NXP Semiconductors Next Button
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February 1995
6
Philips Semiconductors
Preliminary specification
2
× 24 W BTL or 4 × 12 W single-ended car
radio power amplifier
TDA8564Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
operating
18
V
non-operating
30
V
load dump protection
during 50 ms; tr ≥ 2.5 ms −
45
V
Vpsc
AC and DC short-circuit safe voltage
18
V
Vpr
reverse polarity
6
V
IOSM
non-repetitive peak output current
6
A
IORM
repetitive peak output current
4
A
Ptot
total power dissipation
60
W
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Tvj
virtual junction temperature
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
40
K/W
Rth j-c
thermal resistance from junction to case (see Figs 7 and 8)
1.3
K/W
Fig.7
Equivalent thermal resistance network;
BTL application.
handbook, halfpage
2.2 K/W
0.2 K/W
2.2 K/W
virtual junction
output 1
output 2
case
MEA861 - 1
Fig.8
Equivalent thermal resistance network;
single-ended application.
handbook, halfpage
3.0 K/W
0.7 K/W
3.0 K/W
virtual junction
output 1
output 2
case
3.0 K/W
0.7 K/W
3.0 K/W
output 3
output 4
MEA860 - 2
0.2 K/W



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