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TDA8564Q 数据表(PDF) 5 Page - NXP Semiconductors |
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TDA8564Q 数据表(HTML) 5 Page - NXP Semiconductors |
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5 / 15 page ![]() February 1995 6 Philips Semiconductors Preliminary specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8564Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage operating − 18 V non-operating − 30 V load dump protection during 50 ms; tr ≥ 2.5 ms − 45 V Vpsc AC and DC short-circuit safe voltage − 18 V Vpr reverse polarity − 6 V IOSM non-repetitive peak output current − 6 A IORM repetitive peak output current − 4 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case (see Figs 7 and 8) 1.3 K/W Fig.7 Equivalent thermal resistance network; BTL application. handbook, halfpage 2.2 K/W 0.2 K/W 2.2 K/W virtual junction output 1 output 2 case MEA861 - 1 Fig.8 Equivalent thermal resistance network; single-ended application. handbook, halfpage 3.0 K/W 0.7 K/W 3.0 K/W virtual junction output 1 output 2 case 3.0 K/W 0.7 K/W 3.0 K/W output 3 output 4 MEA860 - 2 0.2 K/W |
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