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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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TDA8564Q 数据表(PDF) 7 Page - NXP Semiconductors |
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TDA8564Q 数据表(HTML) 7 Page - NXP Semiconductors |
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7 / 15 page  February 1995 8 Philips Semiconductors Preliminary specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8564Q AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Stereo BTL application (measured in Fig.17) Po output power THD = 0.5%; note 1 15 19 − W THD = 10%; note 1 20 24 − W Po output power VP = 13.2 V; THD = 0.5%; note 1 − 16 − W VP = 13.2 V; THD = 10%; note 1 − 20 − W THD total harmonic distortion Po = 1 W − 0.1 − % flr low frequency roll-off at −1 dB; note 2 − 45 − Hz fhr high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 45 46 47 dB SVRR supply voltage ripple rejection on note 3 38 41 − dB mute note 3 42 48 − dB standby note 3 80 − − dB |Z i| input impedance 25 30 38 k Ω Vno noise output voltage on Rs = 0 Ω; note 4 − 200 − µV on Rs = 10 kΩ; note 4 − 350 700 µV mute notes 4 and 5 − 180 − µV α cs channel separation Rs = 10 kΩ 40 − − dB |∆G v| channel unbalance − − 1 dB DYNAMIC DISTORTION DETECTOR THD total harmonic distortion V16 ≤ 0.6 V; no short-circuit − 10 − % |
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