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TDA8564Q 数据表(PDF) 6 Page - NXP Semiconductors |
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TDA8564Q 数据表(HTML) 6 Page - NXP Semiconductors |
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6 / 15 page ![]() February 1995 7 Philips Semiconductors Preliminary specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8564Q DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.17; unless otherwise specified. Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. At 18 V < VP < 30 V the DC output voltage ≤1⁄2VP. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 6.0 14.4 18.0 V Iq quiescent current see Fig.9 − 80 160 mA VO DC output voltage note 2 − 6.9 − V |∆VO| DC output offset voltage − − 250 mV Mute select switch V14 switch-on voltage level 8.5 − − V MUTE CONDITION Vmute mute voltage 3.3 − 6.4 V VO output signal in mute position VI(max) = 1 V; f = 1 kHz − − 20 mV |∆V O| DC output offset voltage − − 250 mV STANDBY CONDITION Vstb DC voltage in standby condition 0 − 2 V Istb DC current in standby condition − − 100 µA Isw switch-on current − 12 40 µA Diagnostic output (pin 16) VDIAG diagnostic output voltage any short-circuit or clipping − − 0.6 V |
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