AD8067

Data Sheet

Rev. B | Page 6 of 24

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Rating

Supply Voltage

26.4 V

Power Dissipation

See Figure 3

Common-Mode Input Voltage

VEE – 0.5 V to VCC + 0.5 V

Differential Input Voltage

1.8 V

Storage Temperature Range

–65°C to +125°C

Operating Temperature Range

–40°C to +85°C

Lead Temperature (Soldering 10 sec)

300°C

Junction Temperature

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

MAXIMUM POWER DISSIPATION

The associated raise in junction temperature (TJ) on the die

limits the maximum safe power dissipation in the AD8067

package. At approximately 150°C, which is the glass transition

temperature, the plastic changes its properties. Even temporarily

exceeding this temperature limit can change the stresses that the

package exerts on the die, permanently shifting the parametric

performance of the AD8067. Exceeding a junction temperature

of 175°C for an extended period can result in changes in the

silicon devices, potentially causing failure.

The power dissipated in the package (PD) is the sum of the

quiescent power dissipation and the power dissipated in the

package due to the load drive. The quiescent power is the

voltage between the supply pins (VS) times the quiescent

current (IS). Assuming the load (RL) is referenced to midsupply,

the total drive power is VS/2 × IOUT, some of which is dissipated

in the package and some in the load (VOUT × IOUT). The

difference between the total drive power and the load power is

the drive power dissipated in the package. RMS output voltages

should be considered.

PD = Quiescent Power + (Total Drive Power − Load Power)

(

)

L

OUT

L

OUT

S

S

S

D

R

V

R

V

V

I

V

P

2

–

2













×

+

×

=

If RL is referenced to VS− as in single-supply operation, then the

total drive power is VS × IOUT.

If the rms signal levels are indeterminate, then consider the

worst case, when VOUT = VS/4 for RL to midsupply:

(

) (

)

L

S

S

S

D

R

V

I

V

P

2

4

/

+

×

=

In single-supply operation with RL referenced to VS−, worst case

is VOUT = VS/2.

Airflow increases heat dissipation effectively, reducing θJA. In

addition, more metal directly in contact with the package leads

from metal traces, through holes, ground, and power planes

reduces the θJA.

Figure 3 shows the maximum safe power dissipation in the

package vs. the ambient temperature for the SOT-23-5

(180°C/W) package on a JEDEC standard 4-layer board. θJA

values are approximations.

It should be noted that for every 10°C rise in temperature, IB

approximately doubles (see Figure 22).

–40

2.0

1.5

0.5

0

0

AMBIENT TEMPERATURE – °C

1.0

–30 –20 –10

80

10

20

30

40

50

60

70

SOT-23-5

Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.