GSS4816S

Page: 2/8

ISSUED DATE :2006/04/28

REVISED DATE :

CH-1 Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.01

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

5.7

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

25

uA

-

-

30

-

37

m

-

9

15

Gate-Source Charge

-

2

-

Gate-Drain (“Miller”) Change

-

6

-

nC

-

8

-

Rise Time

-

7

-

Turn-off Delay Time

-

19

-

Fall Time

-

6

-

ns

Input Capacitance

-

610

970

Output Capacitance

-

160

-

Reverse Transfer Capacitance

-

120

-

pF

f=1.0MHz

Gate Resistance

-

1.6

-

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

18

-

ns

Reverse Recovery Charge

-

11

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.