GSS4816S

Page: 3/8

ISSUED DATE :2006/04/28

REVISED DATE :

CH-2 Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.1

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

11

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

100

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

1

mA

-

-

22

-

29

m

-

25

40

Gate-Source Charge

-

4

-

Gate-Drain (“Miller”) Change

-

7

-

nC

-

10

-

Rise Time

-

6

-

Turn-off Delay Time

-

26

-

Fall Time

-

12

-

ns

Input Capacitance

-

1170

1860

Output Capacitance

-

205

-

Reverse Transfer Capacitance

-

142

-

pF

f=1.0MHz

Gate Resistance

-

1.7

-

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

21

-

ns

Reverse Recovery Charge

-

16

-

nC

dI/dt=100A/ s

Schottky Characteristics @ Tj=25 (unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward Voltage Drop

-

0.47

0.5

V

-

0.004

0.2

Max. Reverse Leakage Current

-

0.5

1

Junction Capacitance

-

66

-

pF

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.