GSS6900S datasheet(1/8 Pages) GTM

部件名	GSS6900S

功能描述	DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

PDF	8 Pages

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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1 / 8 page

GSS4816S

Page: 1/8

ISSUED DATE :2006/04/28

REVISED DATE :

G

G S

S S

S 66990000S

S

DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

Description

The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*DC-DC Converter Suitable

*Fast Switching Performance

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

M

0.10

0.25

B

4.80

5.00

H

0.35

0.49

C

3.80

4.00

L

1.35

1.75

D

0°

8°

J

0.375 REF.

E

0.40

0.90

K

45°

F

0.19

0.25

G

1.27 TYP.

Absolute Maximum Ratings

Ratings

Parameter

Symbol

CH-1

CH-2

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current3

ID @TA=25 :

5.7

9.8

A

Continuous Drain Current3

ID @TA=70 :

4.6

7.8

A

Pulsed Drain Current1

IDM

20

30

A

Total Power Dissipation

PD @TA=25 :

1.4

3.1

W

Linear Derating Factor

0.01

0.02

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Value

Parameter

Symbol

Typ.

Max.

Unit

Thermal Resistance Junction-ambient3

Rthj-a(CH-1)

70

90

: /W

Thermal Resistance Junction-ambient3

Rthj-a(CH-2)

42

40

: /W

Thermal Resistance Junction-ambient3

Rthj-a(Schottky)

52

60

: /W

Pb Free Plating Product

CH1 BVDSS

30V

N-CH RDS(ON) 30m

N-CH ID

5.7A

CH2 BVDSS

30V

N-CH RDS(ON) 22m

N-CH ID

9.8A

类似零件编号 - GSS6900S

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