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AD8657ARMZ-R7 数据表(PDF) 3 Page - Analog Devices |
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AD8657ARMZ-R7 数据表(HTML) 3 Page - Analog Devices |
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3 / 24 page  Data Sheet AD8657/AD8659 Rev. C | Page 3 of 24 SPECIFICATIONS ELECTRICAL CHARACTERISTICS—18 V OPERATION VSY = 18 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified. Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS VCM = 0 V to 18 V 350 µV VCM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +85°C 1.8 mV VCM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +125°C 2 mV VCM = 0 V to 18 V, −40°C ≤ TA ≤ +125°C 16 mV Input Bias Current IB 5 20 pA −40°C ≤ TA ≤ +125°C 2.9 nA Input Offset Current IOS 40 pA −40°C ≤ TA ≤ +125°C 5.8 nA Input Voltage Range 0 18 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 18 V 94 110 dB VCM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +85°C 82 dB VCM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +125°C 80 dB VCM = 0 V to 18 V, −40°C ≤ TA ≤ +125°C 64 dB Large Signal Voltage Gain AVO RL = 100 kΩ, VO = 0.5 V to 17.5 V 115 120 dB −40°C ≤ TA ≤ +125°C 105 dB Offset Voltage Drift ΔVOS/ΔT 2 μV/°C Input Resistance RIN 10 GΩ Input Capacitance, Differential Mode CINDM 11 pF Input Capacitance, Common Mode CINCM 3.5 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to VCM, −40°C ≤ TA ≤ +125°C 17.97 V Output Voltage Low VOL RL = 100 kΩ to VCM, −40°C ≤ TA ≤ +125°C 30 mV Short-Circuit Current ISC ±12 mA Closed-Loop Output Impedance ZOUT f = 1 kHz, AV = 1 15 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 2.7 V to 18 V 100 115 dB −40°C ≤ TA ≤ +125°C 90 dB Supply Current per Amplifier ISY IO = 0 mA 18 22 µA −40°C ≤ TA ≤ +125°C 34 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 1 MΩ, CL = 10 pF, AV = 1 80 V/ms Settling Time to 0.1% tS VIN = 1 V step, RL = 100 kΩ, CL = 10 pF 15 µs Unity-Gain Crossover UGC VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 1 230 kHz Phase Margin ΦM VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 1 60 Degrees Gain Bandwidth Product GBP VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 100 230 kHz −3 dB Closed-Loop Bandwidth f−3 dB VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 1 305 kHz Channel Separation CS f = 10 kHz, RL = 1 MΩ 95 dB EMI Rejection Ratio of +IN x EMIRR VIN = 100 mVPEAK; f = 400 MHz, 900 MHz, 1800 MHz, 2400 MHz 90 dB NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 5 µV p-p Voltage Noise Density en f = 1 kHz 50 nV/√Hz f = 10 kHz 45 nV/√Hz Current Noise Density in f = 1 kHz 0.1 pA/√Hz |
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