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AD8657ARMZ-R7 数据表(PDF) 5 Page - Analog Devices

部件名 AD8657ARMZ-R7
功能描述  22 μA, RRIO, CMOS,18 V Operational Amplifiers
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

AD8657ARMZ-R7 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
AD8657/AD8659
Rev. C | Page 5 of 24
ELECTRICAL CHARACTERISTICS—2.7 V OPERATION
VSY = 2.7 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified.
Table 4.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
VCM = 0 V to 2.7 V
350
µV
VCM = 0.3 V to 2.4 V, −40°C ≤ TA ≤ +85°C
1.2
mV
VCM = 0.3 V to 2.4 V, −40°C ≤ TA ≤ +125°C
2.5
mV
VCM = 0 V to 2.7 V, −40°C ≤ TA ≤ +125°C
16
mV
Input Bias Current
IB
1
10
pA
−40°C ≤ TA ≤ +125°C
2.6
nA
Input Offset Current
IOS
20
pA
−40°C ≤ TA ≤ +125°C
5.2
nA
Input Voltage Range
0
2.7
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 2.7 V
77
95
dB
VCM = 0.3 V to 2.4 V, −40°C ≤ TA ≤ +85°C
69
dB
VCM = 0.3 V to 2.4 V, −40°C ≤ TA ≤ +125°C
62
dB
VCM = 0 V to 2.7 V, −40°C ≤ TA ≤ +125°C
47
dB
Large Signal Voltage Gain
AVO
RL = 100 kΩ, VO = 0.5 V to 2.2 V
95
105
dB
−40°C ≤ TA ≤ +125°C
90
dB
Offset Voltage Drift
ΔVOS/ΔT
2
μV/°C
Input Resistance
RIN
10
GΩ
Input Capacitance, Differential Mode
CINDM
11
pF
Input Capacitance, Common Mode
CINCM
3.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 kΩ to VCM, −40°C ≤ TA ≤ +125°C
2.69
V
Output Voltage Low
VOL
RL = 100 kΩ to VCM, −40°C ≤ TA ≤ +125°C
10
mV
Short-Circuit Current
ISC
±4
mA
Closed-Loop Output Impedance
ZOUT
f = 1 kHz, AV = 1
20
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VSY = 2.7 V to 18 V
100
115
dB
−40°C ≤ TA ≤ +125°C
90
dB
Supply Current per Amplifier
ISY
IO = 0 mA
18
22
µA
−40°C ≤ TA ≤ +125°C
34
µA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 1 MΩ, CL = 10 pF, AV = 1
50
V/ms
Settling Time to 0.1%
ts
VIN = 1 V step, RL = 100 kΩ, CL = 10 pF
20
µs
Unity-Gain Crossover
UGC
VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 1
190
kHz
Phase Margin
ΦM
VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 1
55
Degrees
Gain Bandwidth Product
GBP
VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 100
200
kHz
−3 dB Closed-Loop Bandwidth
f−3 dB
VIN = 10 mV p-p, RL = 1 MΩ, CL = 10 pF, AV = 1
245
kHz
Channel Separation
CS
f = 10 kHz, RL = 1 MΩ
95
dB
EMI Rejection Ratio of +IN x
EMIRR
VIN = 100 mVPEAK; f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
6
µV p-p
Voltage Noise Density
en
f = 1 kHz
60
nV/√Hz
f = 10 kHz
56
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.1
pA/√Hz



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