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ADL8111ACCZN-R7 数据表(PDF) 6 Page - Analog Devices

部件名 ADL8111ACCZN-R7
功能描述  10 MHz to 8 GHz Bypass Amplifier
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL8111ACCZN-R7 数据表(HTML) 6 Page - Analog Devices

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Data Sheet
ADL8111
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
analog.com
Rev. A | 6 of 24
Figure 5. Pin Configuration—Top View Not to Scale
Table 7. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
VDD_PA
Drain Bias Voltage. See Table 2.
2
VBIAS
Current Mirror Bias Resistor Pin. Use this pin to set the current to the internal resistor by the external resistor. See
Figure 9 for the interface schematic.
3, 5, 8, 10 to 12, 14, 17, 19 to 22, 24
to 26, 28
GND
RF and DC Ground. See Figure 6 for the interface schematic.
4
RFIN
RF Input. These pins are dc-coupled and matched to 50 Ω. A dc blocking capacitor is required if the RF line potential
is not equal to 0 V dc.
6, 7
VA, VB
Control Input. See Table 2, Table 4, and Table 5. See Figure 8 and Figure 7 for the interface schematics.
9, 13
OUT_B, IN_B
These pins are dc-coupled and matched to 50 Ω. A dc blocking capacitor is required if the RF line potential is not
equal to 0 V dc.
15
VSS_SW
Negative Bias Voltage. See Table 2.
16
VDD_SW
Positive Bias Voltage. See Table 2.
18
RFOUT
RF Output. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required if the RF line potential is
not equal to 0 V dc.
23, 27
IN_A, OUT_A
These pins are dc-coupled and matched to 50 Ω. A dc blocking capacitor is required if the RF line potential is not
equal to 0 V dc.
EPAD
Exposed Pad. The exposed pad must be connected to RF and dc ground.
INTERFACE SCHEMATICS
Figure 6. GND Interface Schematic
Figure 7. VB Interface Schematic
Figure 8. VA Interface Schematic
Figure 9. VBIAS Interface Schematic
Figure 10. RFIN and RFOUT Interface Schematic



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