Data Sheet

ADRF5545A

Rev. B | Page 3 of 20

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

VDD1-CHA, VDD1-CHB, VDD2-CHA, VDD2-CHB, and SWVDD-CHAB = 5 V; SWCTRL-CHAB = 0 V or SWVDD-CHAB;

BP-CHA = VDD1-CHA or 0 V; BP-CHB = VDD1-CHB or 0 V; PD-CHAB = 0 V or VDD1-CHA; case temperature (TCASE) = 25°C, 50 Ω

system, unless otherwise noted.

Table 1.

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

FREQUENCY RANGE

2.4

4.2

GHz

GAIN1

Receive operation at 3.6 GHz

High Gain Mode

32

dB

Low Gain Mode

16

dB

GAIN FLATNESS1

Receive operation in any 100 MHz bandwidth

High Gain Mode

0.6

dB

Low Gain Mode

0.2

dB

NOISE FIGURE (NF)1

Receive operation at 3.6 GHz

High Gain Mode

1.45

dB

Low Gain Mode

1.45

dB

OUTPUT THIRD-ORDER INTERCEPT POINT

(OIP3)1

Receive operation, two-tone output power = 8 dBm per tone

at 1 MHz tone spacing

High Gain Mode

32

dBm

Low Gain Mode

29

dBm

OUTPUT 1 dB COMPRESSION (OP1dB)

High Gain Mode

19

dBm

Low Gain Mode

12

dBm

INSERTION LOSS1

Transmit operation at 3.6 GHz

0.65

dB

Channel to Channel Isolation1

At 3.6 GHz

Between RXOUT-CHA AND RXOUT-CHB

Receive operation

47

dB

Between TERM-CHA AND TERM-CHB

Transmit operation

52

dB

SWITCH ISOLATION

ANT-CHA TO TERM-CHA AND ANT-CHB

TO TERM-CHB1

Transmit operation, PD-CHAB = 0 V

25

dB

SWITCHING CHARACTERISTICS (tON, tOFF)

50% control voltage to 90%, 10% of RXOUT-CHA or

RXOUT-CHB in receive operation

860

ns

50% control voltage to 90%, 10% of TERM-CHA or TERM-CHB

in transmit operation

800

ns

RF INPUT POWER AT ANT-CHA, ANT-CHB1

Receive operation, LTE average (9 dB PAR)

15

dBm

INPUT 0.1dB COMPRESSION (P0.1dB)

100 µs pulse width, 10% duty cycle, TCASE = 25°C2

50

dBm

RECOMMENDED OPERATING

CONDITIONS

Bias Voltage Range

VDD1-CHA, VDD1-CHB, VDD2-CHA, VDD2-CHB,

SWVDD-CHAB

4.75

5

5.25

V

Control Voltage Range

SWCTRL-CHAB, BP-CHA, BP-CHB, PD-CHAB

0

VDD3

V

RF Input Power at ANT-CHA, ANT-CHB

SWCTRL-CHAB = 5 V, PD-CHAB = 5 V, BP-CHA = BP-CHB = 0 V,

TCASE = 105°C2

Continuous wave

40

dBm

9 dB PAR LTE full lifetime average

40

dBm

9 dB PAR LTE single event (<10 sec) average

43

dBm

Case Temperature Range (TCASE)2

−40

+105

°C

Junction Temperature at Maximum

TCASE2

Receive operation1

132

°C

Transmit operation1

134

°C