Dual-Channel, 2.4 GHz to 4.2 GHz

Receiver Front End

Data Sheet

ADRF5545A

Rev. B

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FEATURES

Integrated dual-channel RF front end

2-stage LNA and high power SPDT switch

On-chip bias and matching

Single supply operation

Gain

High gain mode: 32 dB typical at 3.6 GHz

Low gain mode: 16 dB typical at 3.6 GHz

Low noise figure

High gain mode: 1.45 dB typical at 3.6 GHz

Low gain mode: 1.45 dB typical at 3.6 GHz

High isolation

RXOUT-CHA and RXOUT-CHB: 47 dB typical

TERM-CHA and TERM-CHB: 52 dB typical

Low insertion loss: 0.65 dB typical at 3.6 GHz

High power handling at TCASE = 105°C

Full lifetime

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec operation)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 32 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

6 mm × 6 mm, 40-lead LFCSP package

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output and active

antenna systems

TDD-based communication systems

FUNCTIONAL BLOCK DIAGRAM

1

GND

2

GND

3

ANT-CHA

4

GND

5

SWCTRL-CHAB

6

SWVDD-CHAB

7

GND

8

ANT-CHB

9

GND

10

GND

23 GND

24 BP-CHB

25 NIC

26 PD-CHAB

27 BP-CHA

28 GND

29 RXOUT-CHA

30 GND

22 RXOUT-CHB

21 GND

ADRF5545A

Figure 1.

GENERAL DESCRIPTION

The ADRF5545A is a dual-channel, integrated radio frequency

(RF), front-end multichip module designed for time division

duplexing (TDD) applications that operates from 2.4 GHz to

4.2 GHz. The ADRF5545A is configured in dual channels with

a cascading two-stage low noise amplifier (LNA) and a high

power silicon single-pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch

offer a low noise figure (NF) of 1.45 dB and a high gain of

32 dB at 3.6 GHz with an output third-order intercept point

(OIP3) of 32 dBm (typical). In low gain mode, one stage of the

two-stage LNA is in bypass, providing 16 dB of gain at a lower

current of 36 mA. In power-down mode, the LNAs are turned

off and the device draws 12 mA.

In transmit operation, when RF inputs are connected to a

termination pin (TERM-CHA or TERM-CHB), the switch

provides a low insertion loss of 0.65 dB and handles long-term

evolution (LTE) average power (9 dB peak to average ratio

(PAR)) of 40 dBm for full lifetime operation and 43 dBm for

single event (<10 sec) LNA protection operation.

The device comes in an RoHS compliant, compact, 6 mm ×

6 mm, 40-lead LFCSP package.