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P3C1024L55SC 数据表(PDF) 1 Page - Pyramid Semiconductor Corporation

部件名 P3C1024L55SC
功能描述  ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
PDF  10 Pages
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制造商  PYRAMID [Pyramid Semiconductor Corporation]
网页  http://www.pyramidsemiconductor.com
标志 PYRAMID - Pyramid Semiconductor Corporation

P3C1024L55SC 数据表(HTML) 1 Page - Pyramid Semiconductor Corporation

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Document # SRAM132 REV OR
Revised April 2006
P3C1024L
ULTRA LOW POWER 128K x 8
CMOS STATIC RAM
locations are specified on address pins A
0 to A16. Read-
ing is accomplished by device selection (
CE
1 low and
CE
2 high) and output enabling (OE) while write enable
(
WE) remains HIGH. By presenting the address under
these conditions, the data in the addressed memory lo-
cation is presented on the data input/output pins. The
input/output pins stay in the HIGH Z state when either
CE
1 or OE is HIGH or WE or CE2 is LOW.
The P3C1024L is packaged in a 32-pin TSOP and 445
mil SOP.
The P3C1024L is a 1,048,576-bit low power CMOS static
RAM organized as 128Kx8. The CMOS memory re-
quires no clocks or refreshing, and has equal access
and cycle times. Inputs are fully TTL-compatible. The
RAM operates from a single 3.3V ± 0.3V tolerance power
supply.
Access times of 55 ns and 70 ns are availale. CMOS is
utilized to reduce power consumption to a low level.
The P3C1024L device provides asynchronous opera-
tion with matching access and cycle times. Memory
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
—32-Pin 445 mil SOP
—32-Pin TSOP
V
CC Current (Commercial/Industrial)
— Operating: 10mA/12mA
— CMOS Standby: 10µA/10µA
Access Times
—55/70 (Commercial or Industrial)
Single 3.3 Volts ± 0.3V Power Supply
Easy Memory Expansion Using
CE
CE
CE
CE
CE
1, CE2 and OE
OE
OE
OE
OE
Inputs
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
SOP (S12)
TOP VIEW
See end of datasheet for TSOP pin configuration.


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