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P3C1024L55SC 数据表(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P3C1024L55SC 数据表(HTML) 2 Page - Pyramid Semiconductor Corporation |
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2 / 10 page ![]() P3C1024L Page 2 of 9 Document # SRAM132 REV OR GND ≤ V IN ≤ VCC Ind'l. Com'l. I LO RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE MAXIMUM RATINGS(1) Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely affect device reliability. DC ELECTRICAL CHARACTERISTICS (Over Recommended Operating Temperature & Supply Voltage)(2) Temperature Range (Ambient) Supply Voltage 3.0V ≤ V CC ≤ 3.6V Industrial (-40°C to 85°C) 3.0V ≤ V CC ≤ 3.6V Commercial (0°C to 70°C) Symbol Parameter Min Max Unit V CC Supply Voltage with Respect to GND -0.3 3.9 V V TERM Terminal Voltage with Respect to GND -0.3 V CC + 0.3 V T A Operating Ambient Temperature -55 125 °C S TG -65 150 °C I OUT Output Current into Low Outputs 20 mA I LAT Latch-up Current >200 mA Storage Temperature Symbol Parameter V OH V OL V IH V IL I LI I SB I SB1 Output High Voltage (I/O 0 - I/O7) Output Low Voltage (I/O 0 - I/O7) Input High Voltage Input Low Voltage V CC Current CMOS Standby Current (CMOS Input Levels) V CC Current TTL Standby Current (TTL Input Levels) Output Leakage Current Input Leakage Current I OH = –1mA, VCC = 3.3V I OL = 2.1mA V CC = 5.5V, IOUT = 0 mA CE 1 ≥ VCC -0.2V, CE2 ≤ 0.2V V CC = 3.6V, IOUT = 0 mA CE 1 = VIH or CE2 = VIL GND ≤ V OUT ≤ VCC Ind'l. CE 1 ≥ VIH or CE2 ≤ VIL Com'l. Test Conditions Min Max Unit 2.4 2.2 -0.3 -2 -1 -2 -1 V V V V µA µA mA µA 0.4 V CC + 0.3 0.8 +2 +1 +2 +1 3 10 |
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