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PS21661-RZ 数据表(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PS21661-RZ 数据表(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 10 page ![]() MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module> PS21661-RZ/FR TRANSFER-MOLD TYPE INSULATED TYPE Mar. 2004 400 –20~+100 –40~+125 1500 VD = 13.5~16.5V, Inverter part Tj = 125 °C start, non-repetitive, less than 2 µs (Note 2) 60Hz, Sinusoidal, AC 1 minute, connection pins to heat-sink plate VCC(PROT) Tf Tstg Viso Symbol Ratings Unit Self protection supply voltage limit (short circuit protection capability) Heatsink operation temperature Storage temperature Isolation voltage V °C °C Vrms TOTAL SYSTEM Parameter Condition Note 2 : Tf MEASUREMENT POINT AI Board AI Board Specification : Dimensions 50 × 50 × 10mm, finishing 12s, warp –50~+100µm 10.5mm 15mm 25mm 10mm 1.5mm IGBT Chip FWD Chip Temp. measure- ment point (inside the AI board) 100~200 µm of evenly applied Silicon-Grease Temp. measurement point (inside the AI board) SIP-IPM Control Terminals 2.15 2.30 2.00 1.10 — 0.55 1.50 1.10 1 10 mA V Tj = 25 °C Tj = 125 °C IC = 3A, Tj = 25 °C IC = 3A, Tj = 125 °C VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Condition Symbol Parameter Limits Inverter IGBT part (per 1/6 module) (Note 3) Inverter FWD part (per 1/6 module) (Note 3) Rth(j-f)Q Rth(j-f)F Min. °C/W THERMAL RESISTANCE Typ. Max. — — — — 9.0 9.0 Unit Tj = 25 °C, –IC = 3A, VIN = 0V Condition Symbol Parameter Limits Min. Typ. Max. — — — 0.35 — — — — — — Unit ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise noted) INVERTER PART Collector-emitter saturation voltage FWD forward voltage Junction to fin thermal resistance VD = VDB = 15V VIN = 5V Switching times VCC = 300V, VD = 15V IC = 3A, Tj = 125 °C Inductive load (upper-lower arm) VIN = 0 ↔ 5V Collector-emitter cut-off current VCE = VCES 1.60 1.70 1.55 0.70 0.20 0.35 1.00 0.55 — — V µs µs µs µs µs Note 4 : Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip- level is less than 5.1A 3.60 3.90 0.50 0.50 — 0.95 1.50 0.53 12.0 12.5 12.5 13.0 — 2.60 1.80 — — — — 4.9 — 0.70 0.43 10.0 10.5 10.3 10.8 20 2.10 1.10 Applied between: UP, VP, WP-VNC, UN, VN, WN-VNC Trip level Reset level Trip level Reset level VUFB-U (VUFS), VVFB-V (VVFS), VWFB-W (VWFS) Circuit current Condition Symbol Parameter Limits ID IDB VFOH VFOL IIN VSC(ref) UVDBt UVDBr UVDt UVDr tFO Vth(on) Vth(off) Min. Typ. Max. Unit CONTROL (PROTECTION) PART VDB = 15V, VIN = 0V VDB = 15V, VIN = 5V VSC = 0V, FO circuit : 1k Ω to 5V pull-up VSC = 1V, IFO = –10mA VIN = 5V Tj = 25 °C, VD = 15V (Note 4) Fault output voltage Supply circuit under-voltage protection Tj ≤ 125°C Fault output pulse width ON threshold voltage OFF threshold voltage — — — — — — 1.06 0.48 — — — — 40 2.35 1.40 mA mA mA mA V V mA V V V V V µs V V Note 3 : Grease with good thermal conductivity should be applied evenly about +100 µm ~ +200µm on the contact surface of SIP-IPM and a heat-sink. Total of VN1-VNC (U, V, W) VD = 15V, VIN = 0V VD = 15V, VIN = 5V Input current Short circuit trip level (Note 4) |
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