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PS21661-RZ 数据表(PDF) 10 Page - Mitsubishi Electric Semiconductor |
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PS21661-RZ 数据表(HTML) 10 Page - Mitsubishi Electric Semiconductor |
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10 / 10 page ![]() MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module> PS21661-RZ/FR TRANSFER-MOLD TYPE INSULATED TYPE Mar. 2004 Fig. 9 TYPICAL SIP-IPM APPLICATION CIRCUIT EXAMPLE Note 1 : Input signal lines are pulled-down with 4.7k Ω (min.) internal resistor. If these input lines are susceptible to noise, an RC coupling at each input is recommended. Input signal voltage is determined by the values of internal pull-down resistor and the external connected resistor. Set the external resistance value so that input signal voltage exceeds the on-threshold voltage. To prevent the input signals oscillation, the wiring of each input should be as short as possible. 2: By virtue of integrating the specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or trans- former isolation is possible. 3: FO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 1k Ω resistance. 4: Approximately a 0.1~2 µF by-pass capacitor should be used across each power supply connection terminals. 5: To prevent errors of the protection function, the wiring of A should be as short as possible. 6: Each capacitor should be located as close to the pins of the SIP-IPM as possible. 7: In the recommended protection circuit, please select the R1C4 time constant in the range of 1.5~2 µs. 8: To prevent surge destruction, the wiring between the smoothing capacitor and the P&N1 pins should be as short as possible. Approxi- mately a 0.1~0.22 µF snubber capacitor between the P&N1 pins is recommended. C2 C1 HO LO VNO NIN COM PIN VS FO CIN VB VCC C2 C1 HO LO VNO NIN COM PIN VS FO CIN VB VCC C2 C1 HO LO VNO NIN COM PIN VS FO CIN CIN VB VCC SIP-IPM M 5V line 15V line C4 N1 R1 CIN A N P R2 IC1 IC2 IC3 R2 R3 C3 C3 R2 C3 UP UN VN1 U(VUFS) VUFB VN1 VNC WP WN FO W(VWFS) VWFB VP VN VN1 V(VVFS) VVFB |
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