Rev. 1.1

256K X 8 BIT LOW POWER CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

-0.5 to 4.6

V

T

e

r

u

t

a

r

e

p

m

e

T

g

n

it

a

r

e

p

O

A

-40 to 85(I grade)

ºC

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

STG

-65 to 150

ºC

P

n

o

it

a

p

i

s

s

i

D

r

e

w

o

P

D

1

W

I

t

n

e

r

r

u

C

t

u

p

t

u

O

C

D

OUT

50

mA

Soldering Temperature (under 10 sec)

260

ºC

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

TRUTH TABLE

MODE

CE#

CE2

OE#

WE#

I/O OPERATION

SUPPLY CURRENT

H

X

X

X

High-Z

Standby

X

L

X

X

High-Z

Output Disable

L

H

H

H

High-Z

Read

L

H

L

H

Write

L

H

X

L

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

MAX.

UNIT

Supply Voltage

V

6

.

3

0

.

3

7

.

2

Input High Voltage

V

-

2

.

2

CC

+0.3

V

Input Low Voltage

V

6

.

0

-

2

.

0

-

Input Leakage Current

- 1

-

1

µA

Output Leakage

Current

Output Disabled

- 1

-

1

µA

Output High Voltage

V

-

7

.

2

2

.

2

A

m

1

-

=

Output Low Voltage

-

-

0.4

V

- 55

-

20

35

mA

Cycle time = Min.

Average Operating

Power supply Current

Cycle time = 1µs

-

4

5

mA

-

0.3

0.5

mA

-

-

Standby Power

Supply Current

CE# V

-0.2V

or CE2≦0.2V

-I*

-

1

µA

®

*I= Industrial temperature

February 2007

AS6C2008

10/February/07, v.1.0

Alliance Memory Inc.

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