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AS6C2008 数据表(PDF) 4 Page - Alliance Semiconductor Corporation

部件名 AS6C2008
功能描述  256K X 8 BIT LOW POWER CMOS SRAM
PDF  13 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS6C2008 数据表(HTML) 4 Page - Alliance Semiconductor Corporation

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Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25 ºC
5. 10µA for special request
CAPACITANCE (TA= 25 , f
℃
= 1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX
UNIT
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
IN
-
6
pF
Input/Output Capacitance
CI/O
-
8
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
V
o
t
V
2
.
0
s
l
e
v
e
L
e
s
l
u
P
t
u
p
n
I
CC
- 0.2V
s
n
3
s
e
m
i
T
ll
a
F
d
n
a
e
s
i
R
t
u
p
n
I
Input and Output Timing Reference Levels
1.5V
C
d
a
o
L
t
u
p
t
u
O
L
= 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
AS6C2008-55
PARAMETER
SYM
MIN MAX.
UNIT
Read Cycle Time
tRC
55
-
ns
Address Access Time
tAA
-
55
ns
Chip Enable Access Time
tACE
-
55
ns
Output Enable Access Time
tOE
-
30
ns
Chip Enable to Output in Low-Z
tCLZ*
10
-
ns
Output Enable to Output in Low-Z
tOLZ*
5
-
ns
Chip Disable to Output in High-Z
tCHZ*
-
20
ns
Output Disable to Output in High-Z
tOHZ*
-
20
ns
Output Hold from Address Change
tOH
10
-
ns
(2) WRITE CYCLE
AS6C2008-55
PARAMETER
SYM
MIN
MAX.
UNIT
Write Cycle Time
tWC
55
-
ns
Address Valid to End of Write
tAW
50
-
ns
Chip Enable to End of Write
tCW
50
-
ns
Address Set-up Time
tAS
0
-
ns
Write Pulse Width
tWP
45
-
ns
Write Recovery Time
tWR
0
-
ns
Data to Write Time Overlap
tDW
25
-
ns
Data Hold from End of Write Time
tDH
0
-
ns
Output Active from End of Write
tOW*
5
-
ns
Write to Output in High-Z
tWHZ*
-
20
ns
*These parameters are guaranteed by device characterization, but not production tested.
®
February 2007
AS6C2008
10/February/07, v.1.0
Alliance Memory Inc.
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