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AS6C2008 数据表(PDF) 6 Page - Alliance Semiconductor Corporation

部件名 AS6C2008
功能描述  256K X 8 BIT LOW POWER CMOS SRAM
PDF  13 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS6C2008 数据表(HTML) 6 Page - Alliance Semiconductor Corporation

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Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
tWR
tAS
(4)
TOW
CE#
tAW
Address
tWC
CE2
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
CE2
Notes :
1.WE#, CE# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
®
February 2007
AS6C2008
10/February/07, v.1.0
Alliance Memory Inc.
Page 6 of 13



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