Stacked CSP (SCSP)

Process Highlights

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Die quantity, stack: Up to 24 high die configurations

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Ball pad pitch: 0.3, 0.4, 0.5, 0.65, 0.75, 0.8 mm

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Die thickness (min): Down to 25 µm

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Laminate core thickness: 40, 50, 60, 100 or 150 µm

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Ball diameter: 0.25, 0.30, 0.40, 0.46 mm

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Die bond pitch (min): 35 µm (in-line) with roadmap

to 25 µm

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Wirebond length (max): 5 mm (200 mils)

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Wirebond diameter (min): 15, 18, 20, 25, 30 µm

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Low loop wirebonding: 35 µm

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Wafer thinning: 200 & 300 mm wafers

Standard Materials

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Package substrate

▷ Dielectric: Laminate (e.g., DS7409, E679,

BT polyimide (e.g., Kapton)

▷ Layer count (laminate): 2-6

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Die attach: Film DA compatible with all

passivation types

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Wire type: Ag, Gold, Cu, PCC, high tensile strength

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Encapsulant: Thixotropic epoxy (black)

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Solder balls: 63 Sn/37 Pb & Pb-Free Sn/3-4 Ag/0.5 Cu

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Device type: Silicon, SiGe, etc.

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Marking: Laser

Stacked CSP Key Technologies

Stacked CSP Cross Section

2 Die On 2-Layer Laminate Structure

Stacked CSP Cross Section

2 + 1 Die On 4-Layer Laminate Structure

Stacked CSP Cross Section

3 + 1 Logic + Memory

Same Size (SS) Die Stacked CSP

Cross Section

2 Die On 2-Layer Laminate Structure

Low loop wirebonding

Film on wire

A

B

B

Die attach film/paste

Top and bottom die

A

B

C

Solderball

Dielectric

D

C

D

B

A

A

Die attach film/paste

Bottom and side die

A

B

C

Solder ball

Dielectric

D

C

D

B

A

Die attach film/paste

Top and bottom die

A

B

C

Solder ball

Dielectric

D

C

D

B

A