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LT8349ACBZ-R7 数据表(PDF) 23 Page - Analog Devices |
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LT8349ACBZ-R7 数据表(HTML) 23 Page - Analog Devices |
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23 / 29 page ![]() Data Sheet LT8349 analog.com Rev B 23 of 29 Figure 31. Simplified Model for Loop Response Board Layout The LT8349 is specifically designed to minimize the electromagnetic interference (EMI) emissions and to maximize efficiency when switching at high frequencies. Figure 32 shows a recommended PCB layout (simplified) for LT8349 (circuits connected SYNC, EN, and ISET are not shown). For more detail and PCB design files refer to the evaluation board user guide for the LT8349. To prevent radiation and high frequency resonance problems, proper layout of the components connected to the IC is essential, especially the power paths with higher di/dt. Refer to Figure 32, the following high di/dt loops should be kept as tight as possible to reduce inductive ringing and EMI emissions. The high di/dt loop of channel 1 is formed by the positive terminal of COUT1, LT8349’s (C-G)1 pins, LT8349’s PGND pins, and the negative terminal of COUT1. The high di/dt loop of channel 2 is formed by the positive terminal of COUT2, LT8349’s (C-G)4 pins, LT8349’s PGND pins, and the negative terminal of COUT2. COUT R1 C1 R2 CIN RC CC CC2 1MΩ L1 L2 CURRENT-MODE POWER STAGE 1 VC FB VOUT CURRENT-MODE POWER STAGE 2 VC INPUT gm = 0.4mS gm1 = 6S × (1 – D) 1V VC gm2 = 6S × (1 – D) IOUT1 IOUT2 LT8349 IVC |
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