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SC412AEVB 数据表(PDF) 4 Page - Semtech Corporation |
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SC412AEVB 数据表(HTML) 4 Page - Semtech Corporation |
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4 / 22 page ![]() Parameter Conditions 25°C -40° to 85°C Units Min Typ Max Min Max Logic Inputs/Outputs (continued) EN Input Bias Current EN = VCC or RTN -1 +1 μA FB Input Bias Current FB = VCC or RTN -1 +1 μA Power Good Output Low Voltage R PWRGD = 10kΩ to VCC 0.4 V Gate Drivers Shoot-Through Protection Delay(1) DH or DL Rising 30 ns DL Pull-Down Resistance DL Low 0.8 1.6 Ω DL Sink Current V DL = 2.5V 3.1 A DL Pull-Up Resistance DL High 2 4 Ω DL Source Current V DL = 2.5V 1.3 A DH Pull-Down Resistance DH Low, BST - LX = 5V 2 4 Ω DH Pull-Up Resistance(2) DH High, BST - LX = 5V 2 4 Ω DH Sink/Source Current V DH = 2.5V 1.3 A Notes: (1) Guaranteed by design. (2) Semtech’s SmartDriver™ FET drive first pulls DH high with a pull-up resistance of 10Ω (typical) until LX = 1.5V (typical). At this point, an additional pull-up device is activated, reducing the resistance to 2Ω (typical). This negates the need for an external gate or boost resistor. 4 © 2006 Semtech Corp. www.semtech.com SC412A POWER MANAGEMENT Electrical Characteristics (continued) |
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