DSILC6-4F2 datasheet(2/11 Pages) STMICROELECTRONICS

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Characteristics

DSILC6-4xx

2/11

Characteristics

Table 1.

Absolute ratings

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

IPP

Peak pulse current

I/O to GND

Pulse waveform = 8/20 µs

SOT-666

Flip-Chip

PPP

Peak pulse power

SOT-666

Flip-Chip

120

Tstg

Storage temperature range

-55 to +150

°C

Maximum junction temperature

125

°C

Lead solder temperature (10 seconds duration)

260

°C

Table 2.

Electrical characteristics (Tamb = 25° C)

Symbol

Parameter

VRM

Reverse stand-off voltage

IRM

Leakage current

VBR

Breakdown voltage

Forward voltage

VCL

Clamping voltage

IPP

Peak pulse current

Symbol

Parameter

Test Conditions

Value

Unit

Min

Typ

Max

IRM

Leakage current

VRM = 5 V

0.5

µA

VBR

Breakdown voltage

between VBUS and GND

IR = 1 mA

Forward voltage

IF = 10 mA

Ci/o-GND

Capacitance between

I/O and GND

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

SOT-666

2.5

Flip-Chip

2.5

VI/O = 1.65 V, VCC = 4.3 V,

F = 1 MHz, VOSC = 400 mV

SOT-666

1.5

1.8

Flip-Chip

1.8

2.0

Ci/o-i/o

Capacitance

between I/O

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

SOT-666

1.0

1.25

Flip-Chip

1.25

1.5

VI/O = 1.65 V, VCC = 4.3 V,

F = 1 MHz, VOSC = 400 mV

SOT-666

0.75

0.9

Flip-Chip

0.9

1.20

ΔCi/o-GND

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

0.06

ΔCi/o-i/o

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

0.05

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