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DSILC6-4F2 数据表(PDF) 3 Page - STMicroelectronics |
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DSILC6-4F2 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() DSILC6-4xx Characteristics 3/11 Figure 1. Relative variation of leakage current versus junction temperature - SOT-666 (typical values) Figure 2. Relative variation of leakage current versus junction temperature Flip-Chip (typical values) Figure 3. Remaining voltage after DSILC6-4P6 during ESD 15 kV positive surge (air discharge) Figure 4. Remaining voltage after DSILC6-4F2 during ESD 15 kV positive surge (air discharge) Figure 5. Remaining voltage after DSILC6-4P6 during ESD 15 kV negative surge (air discharge) Figure 6. Remaining voltage after DSILC6-4F2 during ESD 15 kV negative surge (air discharge) 1 10 100 25 50 75 100 125 T (°C) j V = 5V R I[T RM j] / I [T RM j=25°C] 1 10 100 25 50 75 100 125 T (°C) j V= 5V R I[T RM j] / I [T RM j=25°C] 50 ns/div 50 ns/div 50 ns/div 50 ns/div |
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