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STDRIVEG611Q 数据表(PDF) 9 Page - STMicroelectronics

部件名 STDRIVEG611Q
功能描述  High voltage and high-speed half-bridge gate driver for GaN power switches
PDF  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDRIVEG611Q 数据表(HTML) 9 Page - STMicroelectronics

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Symbol
Parameter
Test condition
Min. Typ. Max. Unit
tHSstart
High-side startup time
LIN = 3.3 V & OUT= 0 V;
DBOOT = STTH1R06, RBOOT= 2.2 Ω
From VBO > 8 V to OUTH enable
5
μs
ILK
High voltage leakage current
BOOT = OUT = 600 V
11
μA
RDBOOT Bootstrap diode on-resistance
LIN = 3.3 V; HIN = 0 V;
VVCC – BOOT = 0.5 V
120
Ω
Output driving buffers
ISO
Peak source current
0.75 1.05
1.3
A
TJ = -40 °C to +125 °C (1)
0.55
1.6
ISI
Peak sink current
1.9
2.4
3.0
A
TJ = -40 °C to +125 °C (1)
1.4
3.7
RSO
Source RDSon
I = 10 mA
3.0
3.7
4.5
Ω
TJ = -40 °C to +125 °C (1)
2.2
7.0
RSI
Sink RDSon
I = 10 mA
0.85
1.2
1.55
Ω
TJ = -40 °C to +125 °C (1)
0.7
2.2
RBLEED
Low-side gate bleeder
VCCL = VCC = 0 V, PGND = GND,
OUTL = 0.1 V
75
100
125
kΩ
Logic inputs and timings
Vih
High level logic threshold voltage
2
2.27
2.5
V
TJ = -40 °C to +125 °C (1)
2.7
Vil
Low level logic threshold voltage
1.1
1.31 1.45
V
TJ = -40 °C to +125 °C (1)
0.8
Vihys
Logic input threshold hysteresis
0.7
0.96
1.2
V
VSSD
SmartSD unlatch threshold
0.5
0.65
0.8
V
TJ = -40 °C to +125 °C (1)
0.9
IINh
LIN, HIN logic ‘1’ input bias current
LIN, HIN = 3.3 V
15
22
36
μA
IINl
LIN, HIN logic ‘0’ input bias current
LIN, HIN = 0 V
1
μA
RPD_IN
LIN, HIN pull-down resistor
LIN, HIN = 3.3 V
90
150
220
kΩ
ISDh
SD/OD logic ‘1’ input bias current
SD/OD = 3.3 V
7
10
15
μA
ISDl
SD/OD logic ‘0’ input bias current
SD/OD = 0 V
1
μA
RPD_SD
SD/OD pull-down resistor
SD/OD = 3.3 V
220
330
450
kΩ
RON_OD SD/OD on-resistance
SD/OD = 400 mV; CIN = 2 V
25
40
58
Ω
IOL_SD
SD/OD low level sink current
7
10
16
mA
tOD_fall
SD/OD loaded fall time
CL= 10 nF; RPU = 10 kΩ to 5 V
90% to 10 % SD/OD
0.75
μs
ISTBYh
STBY logic ‘1’ input bias current
STBY = 3.3 V
7
10
15
μA
ISTBYl
STBY logic ‘0’ input bias current
STBY = 0 V
1
μA
RPD_STBY STBY pull-down resistor
STBY = 3.3 V
220
330
450
kΩ
RON_FLT FLT on-resistance
VFLT = 400 mV, VCC = 12 V
60
80
135
Ω
STDRIVEG611
Electrical
characteristics
DS14457 - Rev 2
page 9/33



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