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STDRIVEG611Q 数据表(PDF) 14 Page - STMicroelectronics

部件名 STDRIVEG611Q
功能描述  High voltage and high-speed half-bridge gate driver for GaN power switches
PDF  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDRIVEG611Q 数据表(HTML) 14 Page - STMicroelectronics

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6.1.3
High-side driver
This block receives input pulses from the logic section through the level shifter and provides driving action to the
high-side GaN transistor.
It is electrically referred to OUT, that must be connected to the source connection (preferably Kelvin) of the high-
side GaN transistor.
GaN VGS sink current can be tuned with the RGATE resistor placed between the OUTH and GaN gate. Source
current can be tuned with the RON resistor between VCCH and RONH. Sink path impedance is the sum of RGATE
and driver RSI, while source path impedance is the total of RON, RGATE and driver RSO. Tuning RON is typically
done to adjust hard turn-on dV/dt. Tuning RGATE is typically done to eventually dump VGS ringing at turn-off, to
adjust hard turn-off dV/dt while avoiding induced turn-on at low-side hard turn-on.
High-side driver circuitry is supplied by the voltage present at the BOOT pin, while an integrated fast startup
voltage regulator tightly stabilizes the supply voltage of the output stage of the driver (VHS). A UVLO comparator
interrupts the high-side GaN activity if the regulator’s output voltage is insufficient for a proper GaN’s driving. See
Section 6.4.4 for detailed HS UVLO protection description.
This section includes an equivalent bootstrap diode, synchronous with low-side on-time, that generates floating
supply voltage (VBO), starting from VCC voltage.
6.1.4
Comparator and smart shutdown
The embedded comparator, typically used for overcurrent detection, immediately turns off both GaNs once CIN
input exceeds the threshold. The event is signaled to SD/OD and FLT pins.
The smart shutdown (SmartSD) feature allows to automatically keep the switches off for the desired time to cool
down the GaN devices while the controller reacts to the overcurrent FLT signal.
6.2
Truth table and control inputs
The STDRIVEG611 has four logic inputs to control the high-side and low-side power transistors.
LIN: low-side driver input, active high;
HIN: high-side driver inputs, active high.
STBY: standby input, active low;
SD/OD: shutdown input, active low.
An open drain output is there (FLT) to communicate externally the operating status of the device.
The SD/OD pin is also used as an output for the comparator with SmartSD disable time function (see
Section 6.6).
Table 6 summarizes the different IC operating modes depending on the Input pin configurations.
Output pin configuration and IC consumption is also reported.
Table 6. Truth table
Mode
INPUTS
OUTPUTS
STBY
SD/OD
LIN
HIN
OUTL
OUTH
FLT
Standby
L
X
X
X
L
L
L
Shutdown
H
L
X
X
L
L
H
High-Z
H
H
L
L
L
L
H
Low-side on
H
H
H
L
H
L
H
High-side on
H
H
L
H
L
H
H
Interlocking
H
H
H
H
L
L
H
Overcurrent
H
L (1)
X
X
L
L
L
1. Forced low from the internal open-drain when CIN > CINth.
The logic inputs have internal pull-down resistors to set a defined logic level even in case of high-Z on signal
lines. As a result, the transistors are set to off in the case of unconnected input pins.
STDRIVEG611
Device description
DS14457 - Rev 2
page 14/33



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