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ST72682 数据表(PDF) 23 Page - STMicroelectronics

部件名 ST72682
功能描述  USB 2.0 high-speed Flash drive controller
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST72682 数据表(HTML) 23 Page - STMicroelectronics

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ST72682
Electrical characteristics
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7.6
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
7.6.1
Functional EMS (Electromagnetic Susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
ESD: Electrostatic Discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD33 and
VSS33 through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can
be reproduced by manually forcing a low state on the RESET pin or the Oscillator pins
for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can
be hardened to prevent unrecoverable errors occurring (see application note AN1015).
Table 16.
EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied
on any I/O pin to induce a
functional disturbance
VDD33=3.3 V, TA=+25 °C, fOSC=12 MHz
compliant with IEC 1000-4-2
4B
VFFTB
Fast transient voltage burst
limits to be applied through
100pF on VDD33 and VSS33
pins to induce a functional
disturbance
VDD33=3.3 V, TA=+25 °C, fOSC=12 MHz
compliant with IEC 1000-4-4
4A



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