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ST72682 数据表(PDF) 24 Page - STMicroelectronics

部件名 ST72682
功能描述  USB 2.0 high-speed Flash drive controller
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST72682 数据表(HTML) 24 Page - STMicroelectronics

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Electrical characteristics
ST72682
24/36
7.6.2
Electromagnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
7.6.3
Absolute Maximum Ratings (Electrical Sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic Discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard.
Static and Dynamic Latch-Up
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
DLU: Electrostatic discharges (one positive then one negative test) are applied to each
pin of 3 samples when the micro is running to assess the latch-up performance in dynamic
mode. Power supplies are set to the typical values, the oscillator is connected as near as
possible to the pins of the micro and the component is put in reset mode. This test
conforms to the IEC1000-4-2 and SAEJ1752/3 standards. For more details, refer to the
application note AN1181.
Table 17.
EMI characteristics
Symbol Parameter
Conditions
Monitored
Frequency
Band
Max vs.
(fOSC at 12 MHz)
Unit
SEMI
Peak level
VDD33=3.3 V, TA=+25 °C,
conforming to SAE J 1752/3(1)
1.
Refer to Application Note AN1709 for data on other package types.
0.1 to 30 MHz
20
dBµV
30 to 130 MHz
25
130 MHz to 1
GHz
25
SAE EMI Level
4
-
Table 18.
Absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human Body Model)
TA=+25°C
2000
V



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