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2SC5906 数据表(PDF) 4 Page - Toshiba Semiconductor |
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2SC5906 数据表(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC5906 2006-11-13 4 0.001 1 3 10 30 100 1000 0.01 0.1 300 1 10 1000 100 Curves should be applied in thermal limited area. Single no repetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) 5 50 500 rth – tw Safe Operating Area Collector-emitter voltage VCE (V) Pulse width tw (s) IC max (continuous) IC max (pulsed) * DC operation* (Ta = 25°C) 10 s* 10 ms* 1 ms* 100 μs* 100 ms* 0.1 0.01 0.3 1 10 30 100 0.03 0.1 0.3 1 10 3 3 0.05 0.5 5 *: Single pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. 10 μs* |
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