2SC5906 datasheet(1/5 Pages) TOSHIBA

部件名	2SC5906

功能描述	Silicon NPN Epitaxial Type High-Speed Switching Applications

PDF	5 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2SC5906

2006-11-13

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5906

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

• High DC current gain: hFE = 200 to 500 (IC = 0.5 A)

• Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)

• High-speed switching: tf = 25 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEX

50

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

7

V

DC

IC

4

Collector current

Pulse

ICP

7

A

Base current

IB

0.4

A

DC

0.8

Collector power

dissipation

t

= 10 s

PC (Note 1)

1.25

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

2)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3S1A

Weight: 0.01 g (typ.)

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2SC5906 数据表(PDF) 1 Page - Toshiba Semiconductor

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类似零件编号 - 2SC5906

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