2SC5906 datasheet(2/5 Pages) TOSHIBA

部件名	2SC5906

功能描述	Silicon NPN Epitaxial Type High-Speed Switching Applications

PDF	5 Pages

Scroll/Zoom	100%

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC5906

2006-11-13

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

⎯

0.1

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

⎯

hFE (1)

VCE = 2 V, IC = 0.5 A

200

⎯

500

DC current gain

hFE (2)

VCE = 2 V, IC = 1.6 A

120

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 1.6 A, IB = 53 mA

⎯

0.20

Base-emitter saturation voltage

VBE (sat)

IC = 1.6 A, IB = 53 mA

⎯

1.10

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

Rise time

⎯

Storage time

tstg

⎯

310

⎯

Switching time

Fall time

See Figure 1.

VCC ≈ 12 V, RL = 7.5 Ω

IB1 = −IB2 = 53 mA

⎯

Figure 1 Switching Time Test Circuit & Timing Chart

Marking

Part No. (or abbreviation code)

Lot code (month)

Lot code (year)

Dot: even year

No dot: odd year

IB2

IB1

μs

Output

Input

IB2

IB1

VCC

Duty cycle

< 1%

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