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ST10F273E 数据表(PDF) 152 Page - STMicroelectronics |
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ST10F273E 数据表(HTML) 152 Page - STMicroelectronics |
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152 / 179 page ![]() Electrical characteristics ST10F273E 152/179 24.8.11 Main oscillator specifications VDD = 5V ± 10%, VSS = 0V, TA = –40°C to +125°C Figure 45. Crystal oscillator and resonator connection diagram TJIT Single period jitter (1) (cycle to cycle = 2 TCL) 6 sigma time period variation (peak to peak) –500 +500 ps Ffree PLL free running frequency Multiplication factors: 3, 4 Multiplication factors: 5, 8, 10, 16 250 500 2000 4000 kHz 1. Not 100% tested, guaranteed by design characterization. Table 71. PLL characteristics [VDD = 5V ± 10%, VSS = 0V, TA = –40°C to +125°C] Symbol Parameter Conditions Value Unit Min. Max. Table 72. Main oscillator characteristics Sym bol Parameter Conditions Value Unit Min. Typ. Max. gm Oscillator transconductance 817 35 mA/V VOSC Oscillation amplitude (1) 1. Not 100% tested, guaranteed by design characterization. Peak to peak – VDD – 0.4 – V VAV Oscillation voltage level(1) Sine wave middle VDD / 2 – 0.25 – tSTUP Oscillator start-up time (1) Stable VDD - crystal 3 4 ms Stable VDD -resonator 2 3 Table 73. Main oscillator negative resistance (module) CA = 12pF 15pF 18pF 22pF 27pF 33pF 39pF 47pF 4MHz 460 Ω 550 Ω 675 Ω 800 Ω 840 Ω 1000 Ω 1180 Ω 1200 Ω 8MHz 380 Ω 460 Ω 540 Ω 640 Ω 580 Ω -- - 12 MHz 370 Ω 420 Ω 360 Ω ---- - CA CA crystal Resonator ST10F273E ST10F273E |
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