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ST10F273E 数据表(PDF) 152 Page - STMicroelectronics

部件名 ST10F273E
功能描述  16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM
PDF  179 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST10F273E 数据表(HTML) 152 Page - STMicroelectronics

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Electrical characteristics
ST10F273E
152/179
24.8.11
Main oscillator specifications
VDD = 5V ± 10%, VSS = 0V, TA = –40°C to +125°C
Figure 45.
Crystal oscillator and resonator connection diagram
TJIT
Single period jitter (1)
(cycle to cycle = 2 TCL)
6 sigma time period variation
(peak to peak)
–500
+500
ps
Ffree
PLL free running frequency
Multiplication factors: 3, 4
Multiplication factors: 5, 8, 10, 16
250
500
2000
4000
kHz
1.
Not 100% tested, guaranteed by design characterization.
Table 71.
PLL characteristics [VDD = 5V ± 10%, VSS = 0V, TA = –40°C to +125°C]
Symbol
Parameter
Conditions
Value
Unit
Min.
Max.
Table 72.
Main oscillator characteristics
Sym
bol
Parameter
Conditions
Value
Unit
Min.
Typ.
Max.
gm
Oscillator
transconductance
817
35
mA/V
VOSC Oscillation amplitude
(1)
1.
Not 100% tested, guaranteed by design characterization.
Peak to peak
VDD – 0.4
V
VAV
Oscillation voltage level(1) Sine wave middle
VDD / 2 – 0.25
tSTUP Oscillator start-up time
(1)
Stable VDD - crystal
3
4
ms
Stable VDD -resonator
2
3
Table 73.
Main oscillator negative resistance (module)
CA =
12pF
15pF
18pF
22pF
27pF
33pF
39pF
47pF
4MHz
460
550
675
800
840
1000
1180
1200
8MHz
380
460
540
640
580
--
-
12 MHz
370
420
360
----
-
CA
CA
crystal
Resonator
ST10F273E
ST10F273E



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