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ST755C 数据表(PDF) 6 Page - STMicroelectronics |
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ST755C 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 16 page ![]() Electrical characteristics ST755C 6/16 4 Electrical characteristics Note: Do not overload or short the Output to Ground. If the above conditions are observed, the device may be damaged. Table 5. Electrical characteristics (Refer to the test circuits, VCC = 5V, VO = -5.25 to -4.75V, ILOAD = 0mA, TA = TMIN to TMAX, unless otherwise specified. Typical value are referred at TA = 25°C) Symbol Parameter Test conditions Min. Typ. Max. Unit VI Input voltage 4 11 V VO Output voltage VCC = 4.5 to 6.2V, IO =0 to 200mA 4.75 5 5.25 V IO Output current VCC = 4.5 to 6.2V, TA = 0 to 70°C 200 275 mA VCC = 4.5 to 6.2V, TA = -40 to 85°C 175 VCC = 4V, VO = -5V 175 VCC = 2.7V, VO = -5V 125 ISUPPLY Supply current (including switching current) No Load, VSHDN = VCC 1.2 3.5 mA IOFF Standby current) No Load, VSHDN = 0V 10 100 µA ISC Short circuit current) 1.2 A ΔVO Line regulation VCC = 4 to 6.2V 0.1 %/V ΔVO Load regulation IO = 0 to 200mA 0.003 %/mA VREF Reference voltage TA = 25°C 1.18 1.25 1.32 V ΔVREF Reference drift TA = TMIN to TMAX 50 ppm/°C RDSON LX on resistance 0.7 Ω ILEAK LX leakage current) VDS = 10V 1 µA ISH Shutdown pin current) 1 µA VIH SHDN input high threshold 2 V VIL SHDN input low threshold 0.25 V fOSC Oscillator frequency 160 KHz h Power efficiency IO =100mA 68 % CC Compensation pin impedance 7.5 K Ω |
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