CPM3-3300-R050A

2

Rev. 02, 09-2024

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power

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The information in this document is subject to change without notice.

Electrical Characteristics (TVJ = 25 °C unless otherwise specified)

Reverse Diode Characteristics (TVJ = 25 °C unless otherwise specified)

Characteristics

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Diode Forward Voltage

VSD

4.9

V

VGS = -5 V, ISD = 20 A

4.1

V

VGS = -5 V, ISD = 20 A, TVJ = 175 C

Reverse Recovery Time

trr

126

ns

VGS = -5 V, ISD = 40 A, VR = 1800 V;

dif/dt = 700 A/μs, TVJ = 175 °C

Reverse Recovery Charge

Qrr

2970

nC

Peak Reverse Recovery Current

Irrm

47

A

Characteristics

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

V(BR)DSS

3300

V

VGS = 0 V, IDS = 100 µA

Gate Threshold Voltage

VGS(th)

2.6

3.5

4.4

V

VDS = VGS, IDS = 26.5 mA

2.6

V

VDS = VGS, IDS = 26.5 mA, TVJ = 175 C

Zero Gate Voltage Drain Current

IDSS

5

30

μA

VDS = 3300 V, VGS = 0 V

Gate-Source Leakage Current

IGSS

10

250

nA

VGS = 15 V, VDS = 0 V

Drain-Source On-State Resistance

RDS(on)

53

69

mΩ

VGS = 15 V, IDS = 40 A

136

VGS = 15 V, IDS = 40 A, TVJ = 175 C

Transconductance

gfs

26

S

VDS = 20 V, IDS = 40 A

27

VDS = 20 V, IDS = 40 A, TVJ = 175 C

Input Capacitance

Ciss

7240

pF

VGS = 0 V, VDS = 1800 V

f = 100 kHz

VAC = 25 mV

Output Capacitance

Coss

100

Reverse Transfer Capacitance

Crss

6

Coss Stored Energy

Eoss

210

µJ

VDS = 1800 V, f = 100 kHz

Internal Gate Resistance

RG(int)

8.8

Ω

f = 100 kHz, VAC = 25 mV

Gate to Source Charge

Qgs

131

nC

VDS = 2000 V, VGS = -5 V/+15 V

IDS = 50 A

Gate to Drain Charge

Qgd

19

Total Gate Charge

Qg

255