Rev. 02, 09-2024

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The information in this document is subject to change without notice.

CPM3-3300-R050A

Wolfspeed SiC Gen3 MOSFET

Description

This is Wolfspeed’s 3rd generation high-performance silicon carbide

MOSFET in a package-less bare die format to be implemented into any

custom module design.

Absolute Maximum Ratings

Stress beyond those listed under absolute maximum ratings may damage the device.

Parameter

Symbol

Rating

Unit

Drain-Source Voltage, across TVJ

VDS(max)

3300

V

Maximum Gate-Source Voltage, Peak Transient Capability

VGS(max)

-10/+20

V

Continuous Drain Current, VGS = 15 V, assumes die packaged with

typical Rth(j-c) = 0.41 K/W

IDS

Tc = 25 °C

52

A

Tc = 100 °C

36

Pulsed Drain Current, tp limited by TVJ(max)

IDS(pulse)

104

A

Virtual Junction and Storage Temperature

TVJ, Tstg

-55 to +175

°C

Maximum Processing Temperature, in non-reactive ambient

Tproc

325

°C

Recommended Operating Conditions

Parameter

Symbol

Rating

Unit

Recommended Operating Gate-Source Voltage

VGS(op)

-5/+15

V

Features

Typical Applications

•

Enhanced 3rd Generation SiC MOSFET

•

High blocking voltage with low on-resistance

•

Easy to parallel and simple to drive

•

Temperature-independent high-speed switching

•

Integrated lumped gate resistance

•

Medium-voltage motor drives

•

Renewable energy

•

Smart grid/grid-tie power generation

•

Pulsed-power applications

•

Rail traction

Package Type: Bare Die

PN: CPM3-3300-R050A