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ADRF5031BCCZN-R7 数据表(PDF) 1 Page - Analog Devices |
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ADRF5031BCCZN-R7 数据表(HTML) 1 Page - Analog Devices |
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1 / 12 page ![]() Data Sheet ADRF5031 9 kHz to 20 GHz, Nonreflective, Silicon SPDT Switch Rev. A DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Wideband frequency range, 9 kHz to 20 GHz ► Nonreflective 50 Ω design ► Low insertion loss ► 0.6 dB typical between 9 kHz to 6 GHz ► 0.8 dB typical between 6 GHz to 12 GHz ► 1.05 dB typical between 12 GHz to 20 GHz ► High isolation ► 55 dB typical between 9 kHz to 6 GHz ► 50 dB typical between 6 GHz to 12 GHz ► 45 dB typical between 12 GHz to 20 GHz ► High input linearity ► P0.1dB: 35 dBm typical ► IP3: 62 dBm typical ► High RF power handling ► Through path: 35 dBm peak and 33 dBm average ► Terminated path: 32 dBm peak and 30 dBm average ► Hot switching (RFC): 35 dBm peak and 33 dBm average ► Hot switching (RFx): 32 dBm peak and 30 dBm average ► CMOS/LVTTL compatible ► No low-frequency spur; no negative voltage generator ► RF on and off time: 5.0 µs ► RF settling time (0.1 dB): 5.3 µs ► Single-supply operation (VDD = 3.3 V, VSS = 0 V) ► 20-terminal, 3 mm × 3 mm, LGA package ► Pin compatible with ADRF5023 and ADRF5027 APPLICATIONS ► Test instrumentation ► Military radios, radars, electronic counter measures (ECMs) ► Microwave radios and very small aperture terminals (VSATs) FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram GENERAL DESCRIPTION The ADRF5031 is a nonreflective, SPDT switch manufactured us- ing the silicon on insulator (SOI) process. The ADRF5031 operates from 9 kHz to 20 GHz with an insertion loss of lower than 1.05 dB and isolation of higher than 45 dB. The device has an RF input power handling capability of 33 dBm average and 35 dBm peak for forward and reverse through paths, hot switching through the RFC port, and 30 dBm average and 32 dBm peak for terminated paths and hot switching through RFx ports. The ADRF5031 operates with dual-supply voltages of ±3.3 V. The ADRF5031 employs com- plementary metal-oxide semiconductor (CMOS) and low-voltage transistor to transistor logic (LVTTL)-compatible control. The ADRF5031 can also operate with a single positive supply volt- age (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated. See Table 2 for more details. The ADRF5031 is pin compatible with the ADRF5023 and ADRF5027 and also pin compatible with ADRF5030, a fast switch- ing version, which operates between 100 MHz to 20 GHz. The ADRF5031 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) and operates from −40°C to +105°C. |
类似零件编号 - ADRF5031BCCZN-R7 |
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类似说明 - ADRF5031BCCZN-R7 |
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