STRH50P6FSY1 datasheet(6/13 Pages) STMICROELECTRONICS

部件名	STRH50P6FSY1

功能描述	P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET??Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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6 / 13 page

Electrical characteristics

STRH50P6FSY3

6/13

Figure 2.

Bias condition during radiation

Table 10.

Single event effect, SOA(1)

Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect

(SEE). Single event effect characterization is illustrated

Ion

Let (Mev/(mg/cm2))

Energy (MeV)

Range (µm)

VDS (V) @VGS0V

316

55.9

459

Table 11.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

200

VSD

(2)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 50 A, VGS = 0

1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50 A, di/dt = 100 A/µs

VDD= 20 V, Tj = 25°C

240

300

3.85

25.6

360

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50 A, di/dt = 100 A/µs

VDD= 20 V, Tj = 150°C

300

376

5.64

451

µC

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