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STRH50P6FSY1 数据表(PDF) 4 Page - STMicroelectronics

部件名 STRH50P6FSY1
功能描述  P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET??Power MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STRH50P6FSY1 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STRH50P6FSY3
4/13
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±18 V
±
100
nA
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0
100
V
VGS(th)
Gate threshold voltage
VDS =VGS, ID = 1 mA
2
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 12 V, ID = 25 A
0.047
0.053
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
2632
440
187.2
3290
550
234
3948
660
280.8
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 50 V, ID = 25 A,
VGS=12 V
92.8
10.4
20.8
116
13
26
139.2
15.6
31.2
nC
nC
nC
RG
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
0.8
1
1.2
Ω
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 30 V, ID = 25 A,
RG = 4.7 Ω, VGS = 12 V
13.6
40
65.6
28.8
17
50
82
36
20.4
60
98.4
43.2
ns
ns
ns
ns



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