STRH50P6FSY1 datasheet(5/13 Pages) STMICROELECTRONICS

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STRH50P6FSY3

Electrical characteristics

5/13

2.2

Post-irradiation

The ST rad-hard power MOSFETs are tested to verify the radiation capability. The

technology is extremely resistant to assurance well functioning of the device inside the

radiation environments. Every manufacturing lot is tested for total ionizing dose.

(@Tj=25°C up to 100Krad (a))

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

200

VSD

(2)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 50 A, VGS = 0

1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50 A, di/dt = 100 A/µs

VDD= 20 V, Tj = 25°C

240

300

3.85

25.6

360

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50 A, di/dt = 100 A/µs

VDD= 20 V, Tj = 150°C

300

376

5.64

451

µC

According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.

Table 9.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

IDSS

Zero gate voltage drain

current (VGS = 0)

80% BVDss

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±18 V

100

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

100

VGS(th)

Gate threshold voltage

VDS =VGS, ID = 1 mA

4.5

RDS(on)

Static drain-source on

resistance

VGS = 12 V, ID = 25 A

0.047

0.053

Ω

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