| 数据搜索系统,热门电子元器件搜索 |
|
AP8012HSEC-R1 数据表(PDF) 3 Page - Wuxi Chipown Micro-electronics limited |
|
|
|||||||||||||||||||||||||||||
AP8012HSEC-R1 数据表(HTML) 3 Page - Wuxi Chipown Micro-electronics limited |
|
3 / 10 page ![]() AP8012H 13/F, Building C, Wangzhuang Technology Innovation Center, Longshan Road,New District, Wuxi Tel: +86(510)85217718 http://www.chipown.com Rev.A 1801 3 / 10 Electrical Characteristics (T J =25°C, VDD = 15 V; unless otherwise specified) Table 3. Power section Table 4. Control section SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT UVLO SECTION VSTART VCC Start Threshold Voltage VCOMP=0V 13 14.5 16 V VSTOP VCC Stop Threshold Voltage VCOMP=0V 7 8 9 V VHYS VCC Threshold Hysteresis 6.5 V VRST VDD Reset Voltage 5.5 6 6.5 V OSCILLATOR SECTION FOSC Initial Accuracy TA = 25°C 40 45 50 kHz FD Frequency Variation ±5 kHz FM Modulation frequency 167 Hz DMAX Maximum duty cycle 65 80 90 % FEEDBACK SECTION ICOMP Feedback Shutdown Current 1.2 mA RCOMP COMP Pin Input Impedance 1.15 kΩ CURRENT LIMIT SECTION ILIM Peak Current Limit TA = 25°C 0.44 0.55 0.66 A TLEB Minimum Turn On Time LEB time 350 ns tSS Soft-start time 10 ms ID_BM Peak drain current during burst mode 100 mA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BVDSS VDMOS Breakdown Voltage ISW =250uA 750 820 V IOFF Static Drain-Source off current VSW =550V 100 uA RDSON Static Drain-Source on Resistance ISW = 400mA, T J =25°C 18 Ω |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |