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M29W800AB 数据表(PDF) 23 Page - STMicroelectronics

部件名 M29W800AB
功能描述  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
PDF  40 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29W800AB 数据表(HTML) 23 Page - STMicroelectronics

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M29W800AT, M29W800AB
Table 18. Write AC Characteristics, W Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Symbol
Alt
Parameter
M29W800AT / M29W800AB
Unit
100
120
VCC = 2.7V to 3.6V
CL = 30pF
VCC = 2.7V to 3.6V
CL = 100pF
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
100
120
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tDVWH
tDS
Input Valid to Write Enable High
45
50
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tGHWL
Output Enable High to Write Enable Low
0
0
ns
tPHPHH
(1, 2)
tVIDR
RP Rise Time to VID
500
500
ns
tPHWL
(1)
tRSP
RP High to Write Enable Low
4
4
µs
tPLPX
tRP
RP Pulse Width
500
500
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
tWHRL
(1)
tBUSY
Program Erase Valid to RB Delay
90
90
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
30
30
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
50
ns
tWLWH
tWP
Write Enable Low to Write Enable High
35
50
ns



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