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M29W800AB 数据表(PDF) 28 Page - STMicroelectronics

部件名 M29W800AB
功能描述  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
PDF  40 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29W800AB 数据表(HTML) 28 Page - STMicroelectronics

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M29W800AT, M29W800AB
28/40
Figure 12. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
Note: 1. All other timings are defined in Read AC Characteristics table.
Table 21. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
Note: 1. All other timings are defined in Read AC Characteristics table.
Symbol
Parameter
M29W800AT / M29W800AB
Unit
80
90
VCC = 3.0V to 3.6V
CL = 30pF
VCC = 2.7V to 3.6V
CL = 30pF
MinMax
MinMax
tEHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
µs
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0601.0
60
sec
tEHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
µs
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
tQ7VQV
Q7 Valid to Output Valid (Data Polling)
35
35
ns
tWHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0601.0
60
sec
tWHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
µs
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
Symbol
Parameter
M29W800AT / M29W800AB
Unit
100
120
VCC = 2.7V to 3.6V
CL = 30pF
VCC = 2.7V to 3.6V
CL = 100pF
MinMax
MinMax
tEHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
µs
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0601.0
60
sec
tEHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
µs
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
tQ7VQV
Q7 Valid to Output Valid (Data Polling)
40
50
ns
tWHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0601.0
60
sec
tWHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
µs
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec



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