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M29W800AB 数据表(PDF) 31 Page - STMicroelectronics

部件名 M29W800AB
功能描述  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
PDF  40 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29W800AB 数据表(HTML) 31 Page - STMicroelectronics

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M29W800AT, M29W800AB
Figure 15. Data Polling Flowchart
Figure 16. Data Toggle Flowchart
Table 22. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C; VCC = 2.7V to 3.6V)
Note: 1. Excluded the time required to execute bus cycles sequence for program operation.
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369
DQ7
=
DATA
YES
NO
YES
NO
DQ5
= 1
DQ7
=
DATA
YES
NO
READ
DQ2, DQ5 & DQ6
START
READ DQ2, DQ6
FAIL
PASS
AI01873
DQ2, DQ6
=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ2, DQ6
=
TOGGLE
Parameter
M29W800AT / M29W800AB
Unit
Min
Typ
Typical after (1)
100k W/E Cycles
Max
Chip Erase (Preprogrammed, VCC = 2.7V)
10
10
sec
Chip Erase (VCC = 2.7V)
15
15
sec
Main Block Erase (VCC = 2.7V)
1.5
15
sec
Chip Program (Byte) (1)
10
10
sec
Chip Program (Word) (1)
55
sec
Byte/Word Program
10
10
µs
Program/Erase Cycles (per Block)
100,000
cycles



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