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SN65LBC173A-EP

SLLSEH1 – NOVEMBER 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential I/O bus voltages, are with respect to GND.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, VCC

(2)

–0.3

6

V

Voltage at any bus input (DC)

–10

15

V

Voltage at any bus input (transient pulse through 100

Ω, see Figure 10)

–30

30

V

Input voltage at G and G, VI

–0.5

VCC + 0.5

V

Receiver output current, IO

–10

10

mA

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

A and B to GND

±6000

V

All pins

±5000

Charged-device model (CDM), per JEDEC specification

JESD22-C101(2)

All pins

±2000

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VCC

Supply voltage

4.75

5

5.25

V

Voltage at any bus terminal

A, B

–7

12

V

VIH

High-level input voltage

G, G

2

VCC

V

VIL

Low-level input voltage

0

0.8

V

Output current

Y

–8

8

mA

TJ

Junction temperature

–55

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

SN65LBC173A-EP

UNITS

D (SOIC)

16 PINS

θJA

Junction-to-ambient thermal resistance

78

°C/W

θJCtop

Junction-to-case (top) thermal resistance

39.5

°C/W

θJB

Junction-to-board thermal resistance

35.4

°C/W

ψJT

Junction-to-top characterization parameter

8.5

°C/W

ψJB

Junction-to-board characterization parameter

35.1

°C/W