ISL85415

2. Specifications

FN8373 Rev.5.01

Page 9 of 30

Jun.4.20

Fault Protection

Thermal Shutdown Temperature

TSD

Rising Threshold

150

°C

THYS

Hysteresis

20

°C

Current Limit Blanking Time

tOCON

17

Clock

pulses

Overcurrent and Auto Restart Period

tOCOFF

8

SS

cycle

Positive Peak Current Limit

IPLIMIT

(Note 7)

0.8

0.9

1

A

PFM Peak Current Limit

IPK_PFM

0.26

0.3

0.34

A

Zero Cross Threshold

10

mA

Negative Current Limit

INLIMIT

(Note 7)

-0.46

-0.40

-0.34

A

Power MOSFET

High-side

RHDS

IPHASE = 100mA, VCC = 5V

450

600

mΩ

Low-side

RLDS

IPHASE = 100mA, VCC = 5V

250

330

mΩ

PHASE Leakage Current

EN = PHASE = 0V

300

nA

PHASE Rise Time

tRISE

VIN = 36V

10

ns

EN/SYNC

Input Threshold

Falling Edge, Logic Low

0.4

1V

Rising Edge, Logic High

1.2

1.4

V

EN Logic Input Leakage Current

EN = 0V/36V

-0.5

0.5

µA

SYNC Logic Input Leakage Current

SYNC = 0V

10

100

nA

SYNC = 5V

1.0

1.3

µA

Notes:

6. Test condition: VIN = 36V, FB forced above regulation point (0.6V), no switching, and power MOSFET gate charging current not included.

7. Established by both current sense amplifier gain test and current sense amplifier output test at IL = 0A.

8. Parameters with Min and/or Max limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by

characterization and are not production tested.

9. Minimum on-time required to maintain loop stability.

Recommended operating conditions, TA = -40°C to +125°C, VIN = 3V to 36V, unless otherwise specified. Typical values are at TA = +25°C.

Boldface limits apply across the operating temperature range (-40°C to +125°C). (Continued)

Parameter

Symbol

Test Conditions

Min

(Note 8)Typ

Max

(Note 8)Unit