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STM32F427NET6 数据表(PDF) 164 Page - STMicroelectronics |
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STM32F427NET6 数据表(HTML) 164 Page - STMicroelectronics |
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164 / 231 page  Electrical characteristics STM32F427xx STM32F429xx 164/231 DocID024030 Rev 6 Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms 1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used. Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR - read timings(1)(2) Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 2THCLK − 0.5 2 THCLK+0.5 ns tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1 ns tw(NOE) FMC_NOE low time 2THCLK 2THCLK+ 0.5 ns th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 - ns tv(A_NE) FMC_NEx low to FMC_A valid - 2 ns th(A_NOE) Address hold time after FMC_NOE high 0 - ns tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 ns th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 - ns tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 2.5 - ns tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK +2 - ns |
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