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BQ78350-R1 数据表(PDF) 7 Page - Texas Instruments |
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BQ78350-R1 数据表(HTML) 7 Page - Texas Instruments |
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7 / 31 page ![]() 7 bq78350-R1 www.ti.com SLUSCD0B – AUGUST 2015 – REVISED NOVEMBER 2018 Product Folder Links: bq78350-R1 Submit Documentation Feedback Copyright © 2015–2018, Texas Instruments Incorporated (1) Specified by design. Not production tested. 7.11 Electrical Characteristics: Register Backup VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I(RB) RB data-retention input current V(RB) > V(RBMIN), VCC < VIT– 1500 nA V(RB) > V(RBMIN), VCC < VIT–, TA = 0°C to 50°C 40 160 V(RB) RB data-retention voltage(1) 1.7 V (1) The bq78350-R1 device times out when any clock low exceeds tTIMEOUT. (2) tHIGH:MAX is minimum bus idle time. SMBC = 1 for t > 50 μs causes a reset of any transaction in progress involving the bq78350-R1 device. (3) tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to stop. (4) tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to stop. 7.12 SMBus Timing Specifications VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN NOM MAX UNIT fSMB SMBus operating frequency SLAVE mode, SMBC 50% duty cycle 10 100 kHz fMAS SMBus master clock frequency MASTER mode, no clock low slave extend 51.2 kHz tBUF Bus free time between start and stop 4.7 µs tHD:STA Hold time after (repeated) start 4 µs tSU:STA Repeated start setup time 4.7 µs tSU:STO Stop setup time 4 µs tHD:DAT Data hold time RECEIVE mode 0 ns TRANSMIT mode 300 tSU:DAT Data setup time 250 tTIMEOUT Error signal/detect See note(1) 25 35 ms tLOW Clock low period 4.7 µs tHIGH Clock high period See note(2) 4 50 tLOW:SEXT Cumulative clock low slave extend time See note(3) 25 ms tLOW:MEXT Cumulative clock low master extend time See note(4) 10 tF Clock/data fall time (VILMAX – 0.15 V) to (VIHMIN + 0.15 V) 300 ns tR Clock/data rise time 0.9 VCC to (VILMAX – 0.15 V) 1000 |
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